Through-silicon-via mark, and semiconductor device and package including through-silicon-via mark

A through silicon via (TSV) mark for overlay measurement includes a first TSV extending through at least a portion of a substrate in a first direction perpendicular to a top surface of the substrate; and at least one ring pattern separated from and surrounding the first TSV in a second direction parallel to the top surface of the substrate, the at least one ring pattern being arranged in a layer lower than the top surface of the first TSV in the first direction, in which the inner measurement point corresponds to the first TSV and the outer measurement point corresponds to the at least one ring pattern, and the inner and outer measurement points are arranged to provide overlay measurements of the TSVs. 一种用于套刻测量的硅通孔(TSV)标记包括：第一TSV，在与衬底的顶表面垂直的第一方向上延伸穿过衬底的至少一部分；以及至少一个环形图案，在与衬底的顶表面平行的第二方向上与第一TSV分开并围绕第一TSV，至少一个环形图案布置在沿第一方向比第一TSV的顶表面低的层中，其中，内测量点对应于第一TSV，外测量点对应于至少一个环形图案，并且内测量点和外测量点被布置为提供对TSV的套刻测量。