Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes a preparation step, a flow step, and a processing step. In the preparation step, a liquid in which titanium is dissolved in advance in an ammonia hydrogen peroxide solution prior to etching is prepared as an etching liquid. In the flowing step, the etching liquid flows after the preparation step, so that the concentration of the etching liquid in the processing tank is uniform. The processing step is to etch the metal film with the etching liquid by placing a semiconductor wafer having the metal film into the processing tank after the flow step is started. It is preferable that the metal film is titanium, and it is preferable that the temperature of the etching solution is made uniform in the treatment step using a measurement means for measuring the temperature of the etching solution. 半导体装置的制造方法具有准备工序、流动工序及处理工序。准备工序是准备在蚀刻使用前的氨过氧化氢溶液中预先溶解了钛的液体，作为蚀刻液。流动工序是在所述准备工序之后进行所述蚀刻液的流动，以使得所述处理槽之中的所述蚀刻液的浓度均匀。处理工序是在开始所述流动工序之后将具有金属膜的半导体晶片放入所述处理槽内，由此通过所述蚀刻液对所述金属膜进行蚀