System and method for measuring thickness and quality of crystal during crystal growth of silicon carbide

The invention discloses a system and a method for measuring crystal thickness and quality during silicon carbide crystal growth, the measuring system comprises a graphite disc, a resistance detection module, a calculation module and a display module, a seed crystal is arranged below the graphite dis...

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Bibliographische Detailangaben
Hauptverfasser:	LI HUI, SU WENFENG, YANG QIAN, WANG SHOUCHEN, MAO RUICHUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention discloses a system and a method for measuring crystal thickness and quality during silicon carbide crystal growth, the measuring system comprises a graphite disc, a resistance detection module, a calculation module and a display module, a seed crystal is arranged below the graphite disc, silicon carbide crystals grow on the seed crystal, two conductive rods are arranged above the graphite disc, the two conductive rods are electrically connected with the graphite disc, and the resistance detection module is electrically connected with the calculation module. The resistance detection module is used for detecting the resistance between the two conductive rods in real time, the calculation module is used for calculating the thickness and mass of the silicon carbide crystal according to the resistance detected by the resistance detection module, and the display module is used for displaying the thickness and mass of the silicon carbide crystal obtained by the calculation module in real time. The curr