HARD MASK COMPOSITION, HARD MASK LAYER, AND PATTERN FORMING METHOD

HARD MASK COMPOSITION, HARD MASK LAYER, AND PATTERN FORMING METHOD

The present invention relates to a hard mask composition comprising a compound represented by Chemical Formula 1 and a solvent, a hard mask layer comprising a cured product of the hard mask composition, and a pattern forming method using the hard mask composition. In Chemical Formula 1, A, R1 to R5,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: LIM JAE-BUM
Format: Patent
Sprache:chi ; eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention relates to a hard mask composition comprising a compound represented by Chemical Formula 1 and a solvent, a hard mask layer comprising a cured product of the hard mask composition, and a pattern forming method using the hard mask composition. In Chemical Formula 1, A, R1 to R5, and n are as defined in the specification. [Chemical Formula 1] 本发明涉及包含由化学式1表示的化合物和溶剂的硬掩膜组合物、包含该硬掩膜组合物的固化产物的硬掩膜层，以及使用该硬掩膜组合物的图案形成方法。在化学式1中，A、R1至R5以及n的定义如说明书中所述。[化学式1]