Photoelectric detector integrated with double absorption regions and preparation method thereof

The invention relates to the field of integrated chips, and discloses a photoelectric detector integrated with double absorption regions and a preparation method thereof, and the photoelectric detector comprises a first absorption active region, a first optical transmission waveguide region, a second optical transmission waveguide region and a second absorption active region which are sequentially formed on a substrate in the horizontal direction; in the first absorption active region, the first P + doped region and the first N + doped region are electrically connected through the first intrinsic I region; in the second absorption active region, the second P + doped region and the second N + doped region are electrically connected through a second intrinsic I region; wherein the first N + doped region is electrically connected with the second N + doped region; the first P + + doped region is provided with a first metal electrode, and the second P + + doped region is provided with a second metal electrode. The