Simulation analysis-based front-end semiconductor device irradiation reliability research method

The invention relates to a front-end semiconductor device irradiation reliability research method based on simulation analysis, and the method comprises the steps: carrying out the geometric modeling according to the parameters of a high-electron-mobility semiconductor device, and obtaining a to-be-tested model; performing semiconductor physical field docking, solid heat transfer physical field coupling and grid structure subdivision on the to-be-tested model in sequence to obtain a target model; selecting an interface of a semiconductor physical field, an interface of a solid heat transfer physical field and a grid structure in a solver according to the target model, and setting steady-state conditions and transient conditions to obtain a built simulation platform; and analyzing a potential damage area of the front-end high-electron-mobility semiconductor device according to a simulation result of the simulation platform. According to the research method, the interaction between different grids and the coupl