Three-dimensional complex stack epitaxial structure chip

The invention provides a three-dimensional chip with a plurality of stacked epitaxial structures. The chip adopts a back-to-back stacked mode structure or a forward stacked mode structure. An epitaxial growth technology is utilized, a high-resistance-value anti-creeping insulating layer is additionally arranged in a two-layer structure of a first compound layer and a second compound layer, two chip structures can be separated by utilizing the high-resistance-value insulating layer, the first compound layer is prevented from leaking electricity to the second compound layer, and the stacking mode can be forward double-layer stacking or more than three-layer stacking. According to the technical scheme, under the same area, the power density of the element can be improved, the cost can be reduced, the popularity rate can be improved, and the efficiency can be multiplied and the size can be reduced by adopting the three-dimensional complex stacking structure. 本发明提供了一种立体复数堆叠外延结构芯片，该芯片采用背对背堆叠模式结构或者顺向堆叠模式结构。利用外延成长技术，