MEMORY CELL AND METHOD THEREOF

According to various aspects, a memory cell is provided, the memory cell comprising: a capacitive memory structure; and a field effect transistor structure including gate isolation; wherein the capacitive memory structure and the field effect transistor structure are coupled to each other to form a capacitive voltage divider, and wherein the gate isolation comprises at least one gate isolation layer comprising a material having a dielectric constant greater than 4, and wherein the at least one gate isolation layer has a thickness in the range of 3 nm to 10 nm. 根据各个方面，提供一种存储器单元，该存储器单元包括：电容存储器结构；以及场效应晶体管结构，包括栅极隔离；其中电容存储器结构与场效应晶体管结构彼此耦合以形成电容分压器，其中，栅极隔离包括至少一个栅极隔离层，至少一个栅极隔离层包括具有大于4的介电常数的材料，并且其中，至少一个栅极隔离层的厚度介于3nm至10nm的范围内。