Method for polishing silicon carbide wafer

The invention provides a method for polishing a silicon carbide wafer, which comprises the following steps of: providing a silicon carbide wafer which comprises a carbon surface and a silicon surface; and doping at least one of the carbon surface and the silicon surface so as to change the oxidation capacity of the doped surface. And performing chemical mechanical polishing on the silicon carbide wafer after doping, wherein the removal rate of the silicon surface is greater than or equal to the removal rate of the carbon surface. 本发明提供一种碳化硅晶片的抛光方法，包括提供一碳化硅晶片，所述碳化硅晶片包括一碳面与一硅面。对所述碳面与所述硅面其中至少一者进行掺杂，以改变被掺杂面的氧化能力。在所述掺杂后对碳化硅晶片进行化学机械抛光，其中所述硅面的移除速率大于或等于所述碳面的移除速率。