Method for testing junction temperature of power amplifier chip

The invention provides a method for testing the junction temperature of a power amplifier chip, and the method comprises the following steps: building a test platform, fixing a T/R assembly or a power amplifier on the test platform, and setting the test parameters of the test platform; testing: with...

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Bibliographische Detailangaben
Hauptverfasser: MA SHIHAO, GUO YUNXI, TU ZHENBIN, LEI OU, SUN BIN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides a method for testing the junction temperature of a power amplifier chip, and the method comprises the following steps: building a test platform, fixing a T/R assembly or a power amplifier on the test platform, and setting the test parameters of the test platform; testing: within the limit value range of the junction temperature, after setting the pulse frequency in the test platform, respectively testing the junction temperature and the top drop value of the output power of the power amplifier chip in each state; a curve graph is generated, junction temperature and output power top drop values are obtained, and the curve graph describing the relation between the top drop values and the junction temperature is generated; and obtaining a top drop value output by a T/R assembly, and searching the junction temperature of the power amplifier chip corresponding to the T/R assembly according to the relation curve graph of the top drop value and the junction temperature of the chip. According t