Methods of forming protective coatings on process chamber surfaces or components

Embodiments of the present disclosure provide methods of making or otherwise forming a protective coating comprising cerium oxide on a process chamber surface and/or component, such as a surface exposed to a plasma within a process chamber. In one or more embodiments, a method of forming a protective coating within a process chamber includes depositing a cerium oxide layer on a chamber surface or a chamber component during an atomic layer deposition (ALD) process. The ALD process includes sequentially exposing the chamber surface or chamber component to a cerium precursor, a purge gas, an oxidant, and a purge gas in one ALD cycle, and repeating the ALD cycle to deposit a cerium oxide layer. 本揭露内容的实施方式提供在工艺腔室表面和/或部件上制造或以其他方式形成包含氧化铈的保护涂层的方法，工艺腔室表面和/或部件例如是暴露于工艺腔室内的等离子体的表面。在一个或多个实施方式中，在工艺腔室内形成保护涂层的方法包括在原子层沉积(ALD)工艺期间将氧化铈层沉积在腔室表面或腔室部件上。ALD工艺包括在一个ALD周期中，将腔室表面或腔室部件依次暴露于铈前驱物、净化气体、氧化剂和净化气体，以及重复ALD周期以沉积氧化铈层。