Method for reading and writing SDRAM private data

The invention discloses a method for reading and writing SDRAM private data, which comprises the following steps of: (1) transforming an MR (Magnetic Response) according to requirements, firstly, selecting a readable and writable MR, preferably a MR with a value range; (2) setting a corresponding re...

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Bibliographische Detailangaben
Hauptverfasser: XU XIAOFENG, LI MINGWEI, LIU YUANHENG, CHU YINHUAN, ZHANG JIAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a method for reading and writing SDRAM private data, which comprises the following steps of: (1) transforming an MR (Magnetic Response) according to requirements, firstly, selecting a readable and writable MR, preferably a MR with a value range; (2) setting a corresponding read-write process according to the characteristics of the MR register, wherein the basic packet format of the operation process is as follows: all read-write operations are subjected to three write operations: firstly, determining the operation type (read/write), secondly, determining the operated data address, then, determining the length of the data to be read and written this time, and finally, determining the content to be read and written; and (3) all operations on the private data do not influence the original value of the MR, for example, the original value is 0xAA, and the original value is still 0xAA after the operation is finished. The method has the advantages that the MR is transformed to read and write