Hot carrier bidirectional separation type p-i-n type two-dimensional heterojunction, preparation method and device

The invention discloses a hot carrier bidirectional separation type p-i-n type two-dimensional heterojunction, a preparation method and a device. The heterojunction is of a sandwich structure and comprises an n-type semiconductor material, metal with a nano structure and a p-type semiconductor material from bottom to top. Or the heterojunction comprises the p-type semiconductor material, the metal with the nano structure and the n-type semiconductor material from bottom to top. The preparation method comprises the following steps: depositing a layer of n-type semiconductor material on the surface of a substrate; depositing a layer of metal with a nano structure on the surface of the n-type semiconductor material by adopting a physical vapor deposition mode; and depositing a layer of p-type semiconductor material on the metal surface with the nano structure. According to the invention, Schottky junctions are respectively formed by the metal of the nanostructure arranged in the middle and the p-type semiconduct