Memory

The invention provides a memory. Node contact windows are defined through bit lines and insulation lines, contact plugs filled in the node contact windows are made to upwards protrude out of the node contact windows, adjacent contact plugs are further spaced through spacing structures, and first gaps are further formed in the spacing structures. Therefore, the dielectric constant of the dielectric material between the adjacent contact plugs is reduced, and the parasitic effect of the device is effectively improved. 本发明提供了一种存储器。利用位线和绝缘线界定出节点接触窗，并使填充在节点接触窗中的接触插塞还向上凸出节点接触窗，并进一步利用间隔结构间隔相邻的接触插塞，以及所述间隔结构中还形成有第一空隙，如此即有利于降低相邻的接触插塞之间的介质材料的介电常数，有效改善器件的寄生效应。