Method for forming graphene on substrate

The present invention provides a method of forming a graphene film on a substrate, the substrate comprising a silicon carbide portion; the method comprises: heating at least a partial region of the silicon carbide portion in a vacuum, inert or reducing atmosphere, the heating having the following temperature procedures: (i) heating the heated region from a first temperature to a target temperature of 1400-2700 DEG C at a temperature rise rate of 500 DEG C/s or more; (ii) keeping at the target temperature for 0 to 60 seconds; and (iii) cooling the heated region from the target temperature to a second temperature at a cooling rate of 500 DEG C/s or more. 本发明提供一种在基体上形成石墨烯膜的方法，所述基体包括碳化硅部分；所述方法包括：在真空、惰性气氛或还原性气氛中，对所述碳化硅部分的至少部分区域进行加热，所述加热具有以下温度程序：(i)以500℃/s以上的升温速率，将被加热区域从第一温度加热到1400-2700℃的目标温度；(ii)在所述目标温度下的保持0-60s；(iii)以500℃/s以上的降温速率，将被加热区域从所述目标温度冷却至第二温度。