Thin film piezoelectric micro-electro-mechanical structure with improved electrical characteristics and corresponding manufacturing process

Embodiments of the present disclosure relate to thin film piezoelectric microelectromechanical structures with improved electrical characteristics and corresponding fabrication processes. A piezoelectric microelectromechanical structure is provided with a piezoelectric stack having a main extension...

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Bibliographische Detailangaben
Hauptverfasser: ASSANELLI DAVIDE, PRELINI CARLO LUIGI, FERRARINI PAOLO, MARTINI IRENE, QUAGLIA FABIO, GIUSTI DOMENICO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Embodiments of the present disclosure relate to thin film piezoelectric microelectromechanical structures with improved electrical characteristics and corresponding fabrication processes. A piezoelectric microelectromechanical structure is provided with a piezoelectric stack having a main extension in a horizontal plane and a varying cross-section in a plane transverse to the horizontal plane. The stack is formed of a bottom electrode region, a piezoelectric material region disposed on the bottom electrode region, and a top electrode region disposed on the piezoelectric material region. Due to the varying cross-section, the piezoelectric material region has a first thickness in the first region along a vertical axis transverse to the horizontal plane and a second thickness in the second region along the same vertical axis. The second thickness is less than the first thickness. The structures of the first and second regions may form a piezoelectric detector and a piezoelectric actuator, respectively. 本公开的实施例涉及