Preparation method of APD structure based on InAs

The invention discloses a preparation method of an APD structure based on InAs, and the method comprises the steps: enabling a doped n +-InAs layer, an active layer, a doped p-InAs layer and a doped p +-InAs electrode contact layer to grow on an InAs substrate based on the InAs substrate, and enabling the thickness of the active layer to be larger than the thicknesses of other layers; etching the grown material to form a mesa structure based on the grown material; and forming an ohmic contact point based on the deposited metal layer of the formed mesa structure, and completing the preparation of the APD structure. The APD device prepared by the method disclosed by the invention is good in performance, and the method disclosed by the invention is simple in preparation process and low in cost. 本发明公开了一种基于InAs的APD结构的制备方法，包括：以InAs衬底为基础，在所述InAs衬底上生长有掺杂的n+-InAs层、有源层、掺杂的p-InAs层以及掺杂的p+-InAs电极接触层，其中有源层的厚度大于其他各层的厚度；将生长后的材料进行刻蚀，以基于生长后的材料形成台面结构；基于所形成的台面结构的沉积金属层，形成欧姆接触点，完成APD结构的制备。通过本公开的方法所制备的APD器件性能良好，且本公开的方法制备工艺简单，成本低廉。