Two-color infrared device structure and infrared detector
The invention discloses a two-color infrared device structure and an infrared detector, the two-color infrared device structure is provided with a first substrate which is arranged from bottom to top, the material is InSb, and the first substrate is used as a base layer of the two-color infrared dev...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a two-color infrared device structure and an infrared detector, the two-color infrared device structure is provided with a first substrate which is arranged from bottom to top, the material is InSb, and the first substrate is used as a base layer of the two-color infrared device; the transition layer is made of InSb and serves as a buffer layer and a lower electrode layer; the first absorption layer is made of InSb and is used for detecting infrared light of a first wave band; the composite barrier layer comprises, from bottom to top, a first barrier layer made of InAlSb and containing Al of a first gradient component, and the first gradient component is transited from 0% to a first component; the second barrier layer is made of InAlSb and contains Al of a first component; the second absorption layer is made of InAsSb, contains As of a second component and is used for detecting infrared light of a second wave band, and the wavelength of the second wave band is larger than that of the f |
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