Graphene/plasmon black silicon near-infrared detector structure and preparation method thereof

The invention discloses a graphene/plasmon polariton black silicon near-infrared detector structure and a preparation method thereof.The structure comprises an n-type silicon wafer, plasmon polariton black silicon is arranged in the middle of the front face of the silicon wafer, a silicon dioxide layer is arranged on the periphery of the front face of the silicon wafer, a front face electrode is arranged on the silicon dioxide layer, and a back face electrode is arranged on the front face electrode. A graphene layer is arranged on the plasmon black silicon, and the peripheral side of the graphene layer extends and is in contact with the front electrode; the back surface of the silicon wafer is provided with a back electrode. The photoelectric property can be remarkably improved, the response spectrum range is widened, and the responsivity is enhanced. 本发明公开了一种石墨烯/等离子激元黑硅近红外探测器结构及其制备方法，此结构包括n型硅片，所述硅片的正面中部设有等离子激元黑硅，所述硅片的正面周侧设置有二氧化硅层，所述二氧化硅层上设有正面电极，所述等离子激元黑硅上设有石墨烯层，所述石墨烯层的周侧延伸并与所述正面电极接触；所述硅片的背面有背电极。本发明能够显著改善光电性能