Silicon carbide single crystal growth method and crack closed growth method

According to the silicon carbide single crystal growth method and the crack closed growth method provided by the invention, by setting reasonable silicon carbide crystal growth process parameters, crack closing of silicon carbide crystals is realized, and a perfect single crystal layer grows on the cracked crystals, so that the silicon carbide single crystal has the advantages that the quality of the silicon carbide single crystal is improved, and the service life of the silicon carbide single crystal is prolonged. And continuously growing the silicon carbide single crystal by taking the obtained crack-free single crystal layer as a seed crystal. And then cutting off the silicon carbide containing the crack part to obtain the crack-free silicon carbide crystal ingot, and preparing the crack-free silicon carbide crystal ingot from the silicon carbide crystal ingot with the cut crack part again. The problem of recycling stress cracking crystals in the silicon carbide crystal growth and crystal processing proces