Growth method of large-size silicon carbide seed crystal and growth method of corresponding single crystal

The invention relates to the field of silicon carbide crystal growth, and provides a growth method of a large-size silicon carbide seed crystal and a growth method of a large-size silicon carbide single crystal, which comprises the following steps of: cutting a plurality of small-size silicon carbide single crystal wafers with the same crystal faces along a specific crystal direction to form fan-shaped silicon carbide single crystal wafers; splicing and fixing the plurality of sector-ring-shaped silicon carbide single crystal wafers around the small-size silicon carbide single crystal wafer without the positioning edge according to the same spatial crystallization orientation to form a large-size silicon carbide spliced seed wafer, and carrying out a one-time or multi-time seed crystal splicing seam closed growth process until splicing seams are completely closed, so as to obtain the large-size silicon carbide spliced seed wafer. The problem that the large-size silicon carbide seed crystal cannot be obtained