Silicon carbide device with bar-shaped gate electrode and source metallization
Silicon carbide devices having gate electrode and source metallization in a strip shape are disclosed. A silicon carbide device (500) includes a silicon carbide body (100). The silicon carbide body (100) includes a central region (610) and a peripheral region (690) surrounding the central region (61...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | Silicon carbide devices having gate electrode and source metallization in a strip shape are disclosed. A silicon carbide device (500) includes a silicon carbide body (100). The silicon carbide body (100) includes a central region (610) and a peripheral region (690) surrounding the central region (610). The central region (610) includes a source region (110) of a first conductivity type. The peripheral region (690) includes a doped region (120) of the second conductivity type. A bar-shaped gate electrode (155) extends through the central region (610) and into the peripheral region (690). A continuous source metallization (310) is formed on the central region (610) and on an inner portion of the peripheral region (690). The source metallization (310) and the source region (110) form a first ohmic contact in the central region (610). The source metallization (310) and the doped region (120) form a second ohmic contact in the peripheral region (690).
公开了具有条形形状的栅极电极和源极金属化的碳化硅器件。碳化硅器件(500)包括碳化硅本体(100)。碳化硅本体(100)包括中 |
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