High electron mobility transistor and manufacturing method thereof

The invention discloses a high electron mobility transistor. The high electron mobility transistor comprises a substrate; the channel layer is arranged on the substrate; the aluminum gallium nitride layer is arranged on the channel layer; the P-type gallium nitride gate is arranged on the aluminum gallium nitride layer, the aluminum gallium nitride layer comprises a first region and a second region, and the composition of the first region is different from that of the second region. 本发明公开一种高电子迁移率晶体管，包含一基底；一通道层，设于所述基底上；一氮化铝镓层，设于所述通道层上；以及一P型氮化镓栅，设于所述氮化铝镓层上，其中，所述氮化铝镓层包含一第一区域和一第二区域，又其中，所述第一区域的组成不同于所述第二区域的组成。