SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

A semiconductor die and a method of manufacturing the same are disclosed. The invention relates to a semiconductor die (1) having: a semiconductor body (2) comprising an active region (3); a metallization (4) formed on the semiconductor body (2); and a passivation (20) formed on the metallization (4), the metallization (4) including at least one of a titanium layer (4.1), a titanium nitride layer (4.2), and a tungsten layer (4.3) and the passivation (20) including a silicon oxide layer (20.1). 公开了半导体管芯及其制造方法。本发明涉及半导体管芯(1)，其具有：半导体本体(2)，其包括有源区(3)；金属化(4)，其被形成在半导体本体(2)上；钝化(20)，其被形成在金属化(4)上，金属化(4)包括钛层(4.1)、氮化钛层(4.2)和钨层(4.3)中的至少之一并且钝化(20)包括氧化硅层(20.1)。