Wafer surface mark manufacturing method and positioning method of wafer in scanning electron microscope

The invention discloses a wafer surface mark manufacturing method and a positioning method of a wafer in a scanning electron microscope, and belongs to the technical field of semiconductors, the wafer surface mark manufacturing method comprises a gluing process, an exposure process and a developing process, the gluing process is to coat a film layer on the surface of the wafer, the exposure process is to expose the wafer through a photoetching machine, and the developing process is to develop the wafer. The developing process is to immerse the wafer into a developing solution. The invention discloses a method for positioning a wafer in a scanning electron microscope. The method comprises a wafer surface mark manufacturing method and a scanning electron microscope internal positioning method. According to the invention, the mark is made on the surface of the wafer through the baffle plate of the photoetching machine, so that the method is suitable for quickly positioning the large-size wafer of 4-8 inches duri