Damascene interconnect structure with low resistance vias for integrated circuits

An integrated circuit interconnect structure includes a metallization line having a bottom barrier material and a metallization via free of the bottom barrier material. The barrier material at the bottom of the metallization line may, together with the barrier material on the sidewalls of the metallization line, mitigate diffusion or migration of the filler metal from the line. No barrier material at the bottom of the via may reduce via resistance and/or facilitate the use of high resistance barrier material that may enhance scalability of the interconnect structure. Various mask materials and patterning techniques may be integrated into a dual damascene interconnect process to provide barrier materials and low resistance vias that are unloaded by the barrier materials. 集成电路互连结构包括具有底部阻挡材料的金属化线和没有底部阻挡材料的金属化过孔。在金属化线的底部处的阻挡材料可以与在金属化线的侧壁上的阻挡材料一起减轻填充金属从线的扩散或迁移。在过孔的底部处没有阻挡材料可以减小过孔电阻和/或促进可以增强互连结构的可缩放性的高电阻阻挡材料的使用。可以将多种掩模材料和图案化技术集成到双镶嵌互连工艺中，以提供阻挡材料和不受阻挡材料的负担的低电阻过孔。