Rectifier diode capable of resisting single event burnout effect and reinforcing preparation method thereof

The invention provides an anti-single event burnout effect rectifier diode and a reinforcement preparation method thereof, and aims to improve the radiation resistance of a high-voltage fast recovery rectifier diode for a spacecraft and provide component guarantee for a new generation of spacecrafts. Aiming at the phenomenon that a high-voltage fast-recovery rectifier diode is easy to form a failure point at the edge of a main junction under the irradiation of high-energy particles, the invention provides a main junction edge local carrier life control technology, and local lattice damage is formed at the edge of the main junction by utilizing high-energy helium ion implantation so as to introduce an additional recombination center; the recombination efficiency of carriers at the edge of the main junction is improved, so that the current density and heat accumulation at the edge of the main junction are reduced, and the purpose of improving the radiation resistance of the high-voltage fast recovery rectifier