Novel digital gate integrated circuit structure

The invention discloses a novel digital gate integrated circuit structure, and relates to a microelectronic technology and a semiconductor technology. The vertical MOS transistor is composed of at least two vertical MOS transistors which are arranged in parallel, each vertical MOS transistor compris...

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Bibliographische Detailangaben
Hauptverfasser:	LI YAOSEN, LIN FAN, NIE RUIHONG, PENG CHENXI, ZENG XIANGHE, HU ZHAOXI, LIAO YONGBO, LI PING, TANG RUIFENG, FENG KE, ZOU JIARUI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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