Full-transparent thin film transistor based on indium tin oxide and preparation method thereof

The invention discloses a full-transparent thin film transistor based on indium tin oxide and a preparation method thereof. The transistor comprises a substrate, a buffer layer, a gate electrode, a gate dielectric layer, a channel layer, a source electrode and a drain electrode, the gate electrode and the source electrode and the drain electrode are made of metallic ITO, and the channel layer is made of semiconductor ITO. The semiconductor property and the metal property of the ITO can be realized by adjusting the magnetron sputtering growth thickness and the oxygen partial pressure. The field effect transistor device based on the ITO electrode can realize better light transmission. In addition, compared with other traditional oxide semiconductor devices, the design can greatly reduce the use of metal materials, and further reduces the preparation difficulty and cost. By using a high mobility semiconductor channel ITO, the device can provide more excellent driving capability than other conventional oxide semi