Indium tin oxide vertical type ring gate field effect transistor and preparation method thereof

The invention discloses an indium tin oxide vertical type ring gate field effect transistor and a preparation method thereof. The field effect transistor is of a vertical gate-all-around structure and comprises an insulating substrate, a drain electrode, an indium tin oxide channel layer with a large aspect ratio and a source electrode are sequentially stacked on the insulating substrate from bottom to top, and the indium tin oxide channel layer is surrounded and wrapped by a high-kappa gate dielectric layer and a gate electrode to form the gate-all-around structure. The indium tin oxide channel is surrounded by the ring gate, the gate control capability is enhanced, the short channel effect can be better inhibited, the process node is further promoted, compared with a planar ring gate, the limitation on the gate length and the source-drain contact area is smaller, the overall process thermal budget is within 300 DEG C, and three-dimensional stacking can be performed, so that the integration density is effect