Formation method of semiconductor structure

A method for forming a semiconductor structure comprises the following steps: providing a substrate which comprises a first region and a second region; forming a first groove in the substrate in the first region; and forming a plurality of mutually separated fin parts in the substrate in the second region while or after the first grooves are formed, a second groove is arranged between the adjacent fin parts, and the depth of the second groove is smaller than that of the first groove. According to the forming method of the semiconductor structure provided by the embodiment of the invention, a double-depth shallow trench isolation structure can be formed, and no fin part remains between the first trench and the second trench which are deeper, so that the isolation effect of the shallow trench isolation structure is ensured, the electric leakage phenomenon is prevented, and the performance of the semiconductor structure is facilitated. 一种半导体结构的形成方法，包括：提供衬底，所述衬底包括第一区和第二区；在所述第一区的所述衬底内形成第一沟槽；在形成所述第一沟槽的同时或之后，在所述第二区的