Method for reducing thickness of photoresist film in photoetching process

The invention discloses a method for reducing the thickness of a photoresist film in a photoetching process, which comprises the following steps of: placing a wafer on a carrying table and fixing, controlling the carrying table to rotate by a motor to drive the wafer to rotate at a certain speed, mo...

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Bibliographische Detailangaben

Hauptverfasser:	SHENG KUANG, XIONG DANNI, WANG HENGYU, REN NA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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