Method for reducing thickness of photoresist film in photoetching process

The invention discloses a method for reducing the thickness of a photoresist film in a photoetching process, which comprises the following steps of: placing a wafer on a carrying table and fixing, controlling the carrying table to rotate by a motor to drive the wafer to rotate at a certain speed, moving an EBR nozzle to the circle center of the wafer and spraying EBR downwards from the upper part of the wafer, moving the EBR nozzle away from the surface of the wafer after the liquid amount reaches the designed amount, and spraying the EBR on the surface of the wafer after the liquid amount reaches the designed amount. At the moment, the speed of the carrying table is reduced to low-speed rotation, the glue dripping nozzle moves to the circle center of the wafer and drips glue downwards from the upper portion of the wafer, and after the glue amount reaches a design value, the carrying table is accelerated to high-speed rotation to complete uniform distribution of the glue amount and then is reduced to be stati