Dynamic process control in semiconductor fabrication
Methods and systems for dynamic process control in substrate processing, such as in semiconductor manufacturing applications, are provided. Some example systems and methods are provided for advanced monitoring and machine learning in atomic layer deposition (ALD) processes. Some examples also relate...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | JIANG GENGWEI ADUR, SIDDABA KUMAR PURUSHOTTAM HO DANIEL ABEL JOSEPH R AGARWAL PULKIT MIAO TENGFEI |
| description | Methods and systems for dynamic process control in substrate processing, such as in semiconductor manufacturing applications, are provided. Some example systems and methods are provided for advanced monitoring and machine learning in atomic layer deposition (ALD) processes. Some examples also relate to dynamic process control and monitoring for chamber parameter matching and gas line fill time.
提供了用于衬底处理中，例如在半导体制造应用中的动态工艺控制的方法和系统。提供了一些示例系统和方法，其用于原子层沉积(ALD)工艺中的高级监控和机器学习。一些示例还涉及用于室参数匹配和气体管线填充时间的动态工艺控制和监控。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114222830A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114222830A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114222830A3</originalsourceid><addsrcrecordid>eNrjZDBxqcxLzM1MVigoyk9OLS5WSM7PKynKz1HIzFMoTgVK5OellCaX5BcppCUmFWUmJ5Zk5ufxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQxMjIyMLYwNHY2LUAABq1S1G</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Dynamic process control in semiconductor fabrication</title><source>esp@cenet</source><creator>JIANG GENGWEI ; ADUR, SIDDABA ; KUMAR PURUSHOTTAM ; HO DANIEL ; ABEL JOSEPH R ; AGARWAL PULKIT ; MIAO TENGFEI</creator><creatorcontrib>JIANG GENGWEI ; ADUR, SIDDABA ; KUMAR PURUSHOTTAM ; HO DANIEL ; ABEL JOSEPH R ; AGARWAL PULKIT ; MIAO TENGFEI</creatorcontrib><description>Methods and systems for dynamic process control in substrate processing, such as in semiconductor manufacturing applications, are provided. Some example systems and methods are provided for advanced monitoring and machine learning in atomic layer deposition (ALD) processes. Some examples also relate to dynamic process control and monitoring for chamber parameter matching and gas line fill time.
提供了用于衬底处理中，例如在半导体制造应用中的动态工艺控制的方法和系统。提供了一些示例系统和方法，其用于原子层沉积(ALD)工艺中的高级监控和机器学习。一些示例还涉及用于室参数匹配和气体管线填充时间的动态工艺控制和监控。</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220322&DB=EPODOC&CC=CN&NR=114222830A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220322&DB=EPODOC&CC=CN&NR=114222830A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIANG GENGWEI</creatorcontrib><creatorcontrib>ADUR, SIDDABA</creatorcontrib><creatorcontrib>KUMAR PURUSHOTTAM</creatorcontrib><creatorcontrib>HO DANIEL</creatorcontrib><creatorcontrib>ABEL JOSEPH R</creatorcontrib><creatorcontrib>AGARWAL PULKIT</creatorcontrib><creatorcontrib>MIAO TENGFEI</creatorcontrib><title>Dynamic process control in semiconductor fabrication</title><description>Methods and systems for dynamic process control in substrate processing, such as in semiconductor manufacturing applications, are provided. Some example systems and methods are provided for advanced monitoring and machine learning in atomic layer deposition (ALD) processes. Some examples also relate to dynamic process control and monitoring for chamber parameter matching and gas line fill time.
提供了用于衬底处理中，例如在半导体制造应用中的动态工艺控制的方法和系统。提供了一些示例系统和方法，其用于原子层沉积(ALD)工艺中的高级监控和机器学习。一些示例还涉及用于室参数匹配和气体管线填充时间的动态工艺控制和监控。</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBxqcxLzM1MVigoyk9OLS5WSM7PKynKz1HIzFMoTgVK5OellCaX5BcppCUmFWUmJ5Zk5ufxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQxMjIyMLYwNHY2LUAABq1S1G</recordid><startdate>20220322</startdate><enddate>20220322</enddate><creator>JIANG GENGWEI</creator><creator>ADUR, SIDDABA</creator><creator>KUMAR PURUSHOTTAM</creator><creator>HO DANIEL</creator><creator>ABEL JOSEPH R</creator><creator>AGARWAL PULKIT</creator><creator>MIAO TENGFEI</creator><scope>EVB</scope></search><sort><creationdate>20220322</creationdate><title>Dynamic process control in semiconductor fabrication</title><author>JIANG GENGWEI ; ADUR, SIDDABA ; KUMAR PURUSHOTTAM ; HO DANIEL ; ABEL JOSEPH R ; AGARWAL PULKIT ; MIAO TENGFEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114222830A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>JIANG GENGWEI</creatorcontrib><creatorcontrib>ADUR, SIDDABA</creatorcontrib><creatorcontrib>KUMAR PURUSHOTTAM</creatorcontrib><creatorcontrib>HO DANIEL</creatorcontrib><creatorcontrib>ABEL JOSEPH R</creatorcontrib><creatorcontrib>AGARWAL PULKIT</creatorcontrib><creatorcontrib>MIAO TENGFEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIANG GENGWEI</au><au>ADUR, SIDDABA</au><au>KUMAR PURUSHOTTAM</au><au>HO DANIEL</au><au>ABEL JOSEPH R</au><au>AGARWAL PULKIT</au><au>MIAO TENGFEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Dynamic process control in semiconductor fabrication</title><date>2022-03-22</date><risdate>2022</risdate><abstract>Methods and systems for dynamic process control in substrate processing, such as in semiconductor manufacturing applications, are provided. Some example systems and methods are provided for advanced monitoring and machine learning in atomic layer deposition (ALD) processes. Some examples also relate to dynamic process control and monitoring for chamber parameter matching and gas line fill time.
提供了用于衬底处理中，例如在半导体制造应用中的动态工艺控制的方法和系统。提供了一些示例系统和方法，其用于原子层沉积(ALD)工艺中的高级监控和机器学习。一些示例还涉及用于室参数匹配和气体管线填充时间的动态工艺控制和监控。</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN114222830A |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Dynamic process control in semiconductor fabrication |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T21%3A19%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JIANG%20GENGWEI&rft.date=2022-03-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114222830A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |