MgZnO film and band gap adjusting method and application thereof

The invention relates to the technical field of MgZnO film band gap adjustment, in particular to a MgZnO film and a band gap adjustment method and application thereof, and the method comprises the following steps: observing the MgZnO film according to an SEM diagram, an AFM diagram and an EDS diagram of the MgZnO film; an MgZnO thin film is obtained based on an ALD technology and a low-temperature growth technology, and a planar photoconductive detector is prepared; a semiconductor parameter analyzer is adopted to test the characteristics of the planar photoconductive detector; performing a photoresponse switch test on the device; and performing transmission spectrum test analysis on the returned sample to determine whether the device has spectral selectivity or not, so that phase splitting of the film can be avoided. 本发明涉及MgZnO薄膜带隙调节技术领域，具体涉及一种MgZnO薄膜及其带隙调节方法和应用，包括如下步骤，根据MgZnO薄膜的SEM图、AFM图、EDS图观察MgZnO薄膜；基于ALD技术低温生长技术获得MgZnO薄膜，并制备平面光电导型探测器；采用半导体参数分析仪测试平面光电导型探测器的特性；对器件进行光响应的开关测试；经过退货处理的样品进行透射谱测试分析，确定器件是否具有光谱选择性