Method for reducing particles generated in PECVD (plasma enhanced chemical vapor deposition) film deposition process
The invention discloses a method for reducing particles generated in the PECVD thin film deposition process. The method comprises the following steps that S1, a wafer is conveyed into a PECVD cavity through a conveying mechanism and preheated; s2, side reaction gas in the process gas is introduced i...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for reducing particles generated in the PECVD thin film deposition process. The method comprises the following steps that S1, a wafer is conveyed into a PECVD cavity through a conveying mechanism and preheated; s2, side reaction gas in the process gas is introduced into the PECVD chamber, and the chamber pressure in the PECVD chamber is kept stable; s3, turning on the radio frequency power supply and keeping the radio frequency power supply for a first preset time until the plasma in the PECVD chamber is in a stable state; s4, introducing a main reaction gas in the process gas into the PECVD chamber, starting to deposit the thin film until the thickness of the thin film reaches a preset thickness, and closing the main reaction gas; and S5, continuously maintaining the on state of the radio-frequency power supply for a second preset time, then closing the radio-frequency power supply, and simultaneously closing the side reaction gas. According to the method for reducing the par |
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