Integrated assembly and method of forming integrated assembly

The invention relates to an integrated assembly and a method of forming an integrated assembly. Some embodiments include a method of forming an integrated assembly. A semiconductor material is patterned into a configuration including a set of first upwardly protruding structures spaced apart from each other by a first gap and a second upwardly protruding structure spaced apart from the set by a second gap. The second gap is larger than the first gap. A conductive material is formed along the first upward protruding structure and the second upward protruding structure and within the first gap and the second gap. First and second segments of a protective material are formed over a region of the conductive material within the second gap, and the conductive material is then patterned into a first conductive structure within the first gap and into a second conductive structure within the second gap using etching. Some embodiments include an integrated assembly. 本申请涉及集成组合件和形成集成组合件的方法。一些实施例包含一种形成集成组合件的方法。将半导体材料图案化为一