Magnetic random access memory and forming method thereof

The invention discloses a magnetic random access memory and a forming method thereof. The method comprises the following steps: providing a substrate; forming a first dielectric layer on the substrate, wherein a first opening is formed in the first dielectric layer; forming a first conductive structure and a second conductive structure in the first opening; and forming a magnetic tunnel junction on the first dielectric layer and the second conductive structure. A first conductive structure and a second conductive structure are formed in a first opening, and the material of the second conductive structure is different from that of the first conductive structure. Because the first conductive structure can form a relatively high height and the correspondingly formed first dielectric layer is also relatively high, the first dielectric layer is prevented from being penetrated by etching in the process of forming the magnetic tunnel junction; the material hardness of the second conductive structure is large, and th