Semiconductor device
A semiconductor device comprises a substrate, a first semiconductor layer, a second semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, a first conducting layer and a second conducting layer. The first semiconductor layer is disposed on the substrate a...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A semiconductor device comprises a substrate, a first semiconductor layer, a second semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, a first conducting layer and a second conducting layer. The first semiconductor layer is disposed on the substrate and has a first portion. The first insulating layer is arranged on the first semiconductor layer. The first conductive layer is disposed on the first insulating layer and has a first portion. The second insulating layer is arranged on the first conductive layer. The second semiconductor layer is disposed on the second insulating layer and has a first portion. The first semiconductor layer first portion, the first conductive layer first portion and the second semiconductor layer first portion are sequentially arranged in the direction away from the substrate. The third insulating layer is arranged on the second semiconductor layer. The second conductive layer is arranged on the third insulating layer. The second cond |
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