METHOD OF FORMING SEMICONDUCTOR DEVICE AND PHOTOMASK USED THEREIN

The invention relates to a method of forming a semiconductor device and a photomask used therein. A method includes forming an insulating film over first, second, third, and fourth regions of a semiconductor substrate; forming a polyimide film on the insulating film; and patterning the polyimide film by a photolithography method using a photomask including at least a first region of a first transmittance, a second region of a second transmittance, a third region having a masking material, and a fourth region, wherein the first, second, third and fourth regions of the photomask correspond to the first, second, third and fourth regions of the semiconductor substrate, respectively. 本申请涉及一种形成半导体装置的方法和其中使用的光掩模。一种方法包含：在半导体衬底的第一、第二、第三和第四区上方形成绝缘膜；在所述绝缘膜上形成聚酰亚胺膜；以及使用至少包含第一透射率的第一区、第二透射率的第二区、具有遮蔽材料的第三区和第四区的光掩模利用光刻方法使所述聚酰亚胺膜图案化，其中所述光掩模的所述第一、第二、第三和第四区分别对应于所述半导体衬底的所述第一、第二、第三和第四区。