X7R/X8R dielectric powder suitable for ultrathin-layer base metal inner electrode multilayer ceramic capacitor and preparation method of X7R/X8R dielectric powder
The invention discloses X7R/X8R dielectric powder suitable for an ultra-thin-layer base metal inner electrode multilayer ceramic capacitor and a preparation method of the X7R/X8R dielectric powder. The core part of the ceramic powder with the core-shell structure is barium titanate powder or calcium...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses X7R/X8R dielectric powder suitable for an ultra-thin-layer base metal inner electrode multilayer ceramic capacitor and a preparation method of the X7R/X8R dielectric powder. The core part of the ceramic powder with the core-shell structure is barium titanate powder or calcium barium titanate powder, the shell part of the ceramic powder with the core-shell structure is a composite oxide coating layer, oxides adopted by the composite oxide coating layer comprise at least one of BaO, CaO, SiO2, Y2O3, MgO, MnO2, Al2O3 and Re2O3, and Re represents lanthanide elements. The invention provides doped modified dielectric powder with the grain size of 30-120nm, and the ultrathin-layer base metal inner electrode multilayer ceramic capacitor with the dielectric layer thickness of less than or equal to 1mu m is prepared from the doped modified dielectric powder. The dielectric powder provided by the invention is excellent in performance, the room-temperature dielectric constant (wafer sample) of the |
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