Broadband miniaturized millimeter wave dual-channel cross bridge

The invention discloses a broadband miniaturized millimeter wave dual-channel cross bridge which comprises a dielectric substrate, a first metal structure printed at the bottom of the dielectric substrate, a second metal structure printed at the top of the dielectric substrate and a plurality of met...

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Bibliographische Detailangaben
Hauptverfasser: HU PENG, DING DAZHI, LIAN JIWEI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a broadband miniaturized millimeter wave dual-channel cross bridge which comprises a dielectric substrate, a first metal structure printed at the bottom of the dielectric substrate, a second metal structure printed at the top of the dielectric substrate and a plurality of metal through holes distributed in the dielectric substrate. Mutually crossed and symmetrical air cavity structures are etched in the center position of the dielectric substrate, and a certain distance is formed between the air cavity structures and the metal through holes; and a cylindrical uniform lens is arranged in the center of the air cavity. According to the invention, from 25.8 GHz to 38.3 GHz, the S11 is less than 15dB, and the corresponding impedance bandwidth is 33%; in a target frequency band, the insertion loss variation range of the broadband millimeter wave dual-channel cross bridge is 0.1 dB to 0.5 dB. 本发明公开了一种宽带小型化毫米波双通道交叉电桥,包括介质基板、印刷在介质基板底部的第一金属结构、印刷在介质基板顶部的第二金属结构、以及分布在介质基板上的若干金属通孔;介质基板的中心位置刻蚀相互交叉对称的