Semiconductor structure, three-dimensional memory and manufacturing method thereof

The invention provides a three-dimensional memory and a manufacturing method thereof, and the method comprises the steps: forming a first stacking layer on a substrate, and defining a plurality of chip regions and cutting channel regions located between the adjacent chip regions in the first stackin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GAO JING, LI ZHAOSONG, HAN YUHUI, SHAN CHUANHAI, LU ZHOUYANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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