SUBSTRATE PROCESSING APPARATUS AND METHOD FOR OPERATING SUBSTRATE PROCESSING APPARATUS

According to one embodiment of the present invention, a method of using a substrate processing apparatus includes: a chamber in which a fluorine-containing/silicon salt is deposited on an inner wall through a step of removing an oxide film from a substrate placed therein; the antenna is arranged on the outer side of the cavity; and a thermal decomposition step in which RF power is applied, an inert gas is supplied to the inside of the cavity, and RF power is applied to the antenna, thereby heating the inner wall of the cavity to 75 DEG C or more, and thermally decomposing the fluorine-containing/silicon salt. 根据本发明的一实施例，一种运用基板处理装置的方法，该基板处理装置包括：腔体，通过对置于内部的基板的氧化膜除去工序，在内壁沉积了含氟/硅盐；及天线，设置在上述腔体外侧；被施加RF功率，向上述腔体内部供应惰性气体，且对上述天线施加RF功率，由此将上述腔体内壁加热到75℃以上，热分解上述含氟/硅盐。