Two-dimensional layered bismuth oxyhalide material with adjustable element stoichiometric ratio, preparation method of two-dimensional layered bismuth oxyhalide material and application of two-dimensional layered bismuth oxyhalide material to ultraviolet detector

The invention relates to the technical field of semiconductor photoelectric materials, and mainly relates to a two-dimensional layered bismuth oxyhalide material with an adjustable element stoichiometric ratio, a preparation method of the two-dimensional layered bismuth oxyhalide material and application of the two-dimensional layered bismuth oxyhalide material to an ultraviolet detector. A simple and low-cost furnace tube is used, a bismuth oxyhalide material with the stoichiometric ratio of 1: 1: 1 is prepared through a chemical vapor deposition method, then the furnace tube is used for conducting high-temperature phase conversion on a sample, and other samples with different bismuth/oxygen/chlorine (iodine) element stoichiometric ratios are prepared; wherein a Bi3O4Cl sample with the stoichiometric ratio of bismuth to oxygen to chlorine being 3: 4: 1 has excellent photocurrent switch ratio and specified spectrum light-sensitive responsivity, and has certain commercial potential in the current ultraviolet p