Semiconductor silicon controlled rectifier module

An anode region of a silicon controlled rectifier chip of the semiconductor silicon controlled rectifier module is electrically connected with one end of a conductive column through a soldering paste layer, an anode electrode is located on the surface, opposite to the silicon controlled rectifier chip, of a ceramic insulating sheet, and an anode welding part of the anode electrode is electrically connected with the other end of the conductive column; the silicon controlled rectifier chip, the ceramic insulating sheet, the anode welding part of the anode electrode, the cathode welding part of the cathode electrode and the gate welding part of the gate electrode are positioned in the epoxy packaging body; the ceramic insulating sheet extends from the end face, far away from the anode pin, of the epoxy packaging body to form a heat dissipation plate; the ceramic insulating sheet is located in the epoxy packaging body, and at least two second through holes are formed in the area of one side, far away from the con