Micromechanical filter with zeroing mode structure

The invention provides a micromechanical filter with zeroingmode structure, and belongs to the technical field of semiconductor packaging. The filter comprises an upper dielectric layer and a lower dielectric layer, the upper dielectric layer is provided with an upper layer grounding metalized throu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YUE XIAOPING, WANG SHENGFU, ZHOU MINGQI, ZHU YIFAN, ZHANG JUNJIE, WEN PENGHAO, QI MINGYAN, LI HONGJUN, ZHOU SHAOBO, YU LIANG, WANG XIAOWEI, TANG XIAODONG, WANG XIAOLONG, ZHANG SHAOHUA, SUN TAO
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YUE XIAOPING
WANG SHENGFU
ZHOU MINGQI
ZHU YIFAN
ZHANG JUNJIE
WEN PENGHAO
QI MINGYAN
LI HONGJUN
ZHOU SHAOBO
YU LIANG
WANG XIAOWEI
TANG XIAODONG
WANG XIAOLONG
ZHANG SHAOHUA
SUN TAO
description The invention provides a micromechanical filter with zeroingmode structure, and belongs to the technical field of semiconductor packaging. The filter comprises an upper dielectric layer and a lower dielectric layer, the upper dielectric layer is provided with an upper layer grounding metalized through hole, a signal feed-in part and a signal feed-out part; the lower dielectric layer is bonded to the lower surface of the upper dielectric layer, the lower dielectric layer is provided with a lower layer grounding metalized through hole and a lower layer electromagnetic shielding metalized through hole, and the lower layer electromagnetic shielding metalized through hole serves as a zeroing mode resonant column; the signal feed-in part and the signal feed-out part do not physically communicate with the zeroing mode resonant column; and the upper dielectric layer and the lower dielectric layer realize common ground through the upper layer grounding metalized through hole and the lower layer grounding metalized thr
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114094979A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114094979A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114094979A3</originalsourceid><addsrcrecordid>eNrjZDDyzUwuys9NTc5IzMtMTsxRSMvMKUktUijPLMlQqEotys_MS1fIzU9JVSguKSpNLiktSuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGJgaWJpbmlo7GxKgBAAL9LKY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Micromechanical filter with zeroing mode structure</title><source>esp@cenet</source><creator>YUE XIAOPING ; WANG SHENGFU ; ZHOU MINGQI ; ZHU YIFAN ; ZHANG JUNJIE ; WEN PENGHAO ; QI MINGYAN ; LI HONGJUN ; ZHOU SHAOBO ; YU LIANG ; WANG XIAOWEI ; TANG XIAODONG ; WANG XIAOLONG ; ZHANG SHAOHUA ; SUN TAO</creator><creatorcontrib>YUE XIAOPING ; WANG SHENGFU ; ZHOU MINGQI ; ZHU YIFAN ; ZHANG JUNJIE ; WEN PENGHAO ; QI MINGYAN ; LI HONGJUN ; ZHOU SHAOBO ; YU LIANG ; WANG XIAOWEI ; TANG XIAODONG ; WANG XIAOLONG ; ZHANG SHAOHUA ; SUN TAO</creatorcontrib><description>The invention provides a micromechanical filter with zeroingmode structure, and belongs to the technical field of semiconductor packaging. The filter comprises an upper dielectric layer and a lower dielectric layer, the upper dielectric layer is provided with an upper layer grounding metalized through hole, a signal feed-in part and a signal feed-out part; the lower dielectric layer is bonded to the lower surface of the upper dielectric layer, the lower dielectric layer is provided with a lower layer grounding metalized through hole and a lower layer electromagnetic shielding metalized through hole, and the lower layer electromagnetic shielding metalized through hole serves as a zeroing mode resonant column; the signal feed-in part and the signal feed-out part do not physically communicate with the zeroing mode resonant column; and the upper dielectric layer and the lower dielectric layer realize common ground through the upper layer grounding metalized through hole and the lower layer grounding metalized thr</description><language>chi ; eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220225&amp;DB=EPODOC&amp;CC=CN&amp;NR=114094979A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220225&amp;DB=EPODOC&amp;CC=CN&amp;NR=114094979A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YUE XIAOPING</creatorcontrib><creatorcontrib>WANG SHENGFU</creatorcontrib><creatorcontrib>ZHOU MINGQI</creatorcontrib><creatorcontrib>ZHU YIFAN</creatorcontrib><creatorcontrib>ZHANG JUNJIE</creatorcontrib><creatorcontrib>WEN PENGHAO</creatorcontrib><creatorcontrib>QI MINGYAN</creatorcontrib><creatorcontrib>LI HONGJUN</creatorcontrib><creatorcontrib>ZHOU SHAOBO</creatorcontrib><creatorcontrib>YU LIANG</creatorcontrib><creatorcontrib>WANG XIAOWEI</creatorcontrib><creatorcontrib>TANG XIAODONG</creatorcontrib><creatorcontrib>WANG XIAOLONG</creatorcontrib><creatorcontrib>ZHANG SHAOHUA</creatorcontrib><creatorcontrib>SUN TAO</creatorcontrib><title>Micromechanical filter with zeroing mode structure</title><description>The invention provides a micromechanical filter with zeroingmode structure, and belongs to the technical field of semiconductor packaging. The filter comprises an upper dielectric layer and a lower dielectric layer, the upper dielectric layer is provided with an upper layer grounding metalized through hole, a signal feed-in part and a signal feed-out part; the lower dielectric layer is bonded to the lower surface of the upper dielectric layer, the lower dielectric layer is provided with a lower layer grounding metalized through hole and a lower layer electromagnetic shielding metalized through hole, and the lower layer electromagnetic shielding metalized through hole serves as a zeroing mode resonant column; the signal feed-in part and the signal feed-out part do not physically communicate with the zeroing mode resonant column; and the upper dielectric layer and the lower dielectric layer realize common ground through the upper layer grounding metalized through hole and the lower layer grounding metalized thr</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDyzUwuys9NTc5IzMtMTsxRSMvMKUktUijPLMlQqEotys_MS1fIzU9JVSguKSpNLiktSuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGJgaWJpbmlo7GxKgBAAL9LKY</recordid><startdate>20220225</startdate><enddate>20220225</enddate><creator>YUE XIAOPING</creator><creator>WANG SHENGFU</creator><creator>ZHOU MINGQI</creator><creator>ZHU YIFAN</creator><creator>ZHANG JUNJIE</creator><creator>WEN PENGHAO</creator><creator>QI MINGYAN</creator><creator>LI HONGJUN</creator><creator>ZHOU SHAOBO</creator><creator>YU LIANG</creator><creator>WANG XIAOWEI</creator><creator>TANG XIAODONG</creator><creator>WANG XIAOLONG</creator><creator>ZHANG SHAOHUA</creator><creator>SUN TAO</creator><scope>EVB</scope></search><sort><creationdate>20220225</creationdate><title>Micromechanical filter with zeroing mode structure</title><author>YUE XIAOPING ; WANG SHENGFU ; ZHOU MINGQI ; ZHU YIFAN ; ZHANG JUNJIE ; WEN PENGHAO ; QI MINGYAN ; LI HONGJUN ; ZHOU SHAOBO ; YU LIANG ; WANG XIAOWEI ; TANG XIAODONG ; WANG XIAOLONG ; ZHANG SHAOHUA ; SUN TAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114094979A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>YUE XIAOPING</creatorcontrib><creatorcontrib>WANG SHENGFU</creatorcontrib><creatorcontrib>ZHOU MINGQI</creatorcontrib><creatorcontrib>ZHU YIFAN</creatorcontrib><creatorcontrib>ZHANG JUNJIE</creatorcontrib><creatorcontrib>WEN PENGHAO</creatorcontrib><creatorcontrib>QI MINGYAN</creatorcontrib><creatorcontrib>LI HONGJUN</creatorcontrib><creatorcontrib>ZHOU SHAOBO</creatorcontrib><creatorcontrib>YU LIANG</creatorcontrib><creatorcontrib>WANG XIAOWEI</creatorcontrib><creatorcontrib>TANG XIAODONG</creatorcontrib><creatorcontrib>WANG XIAOLONG</creatorcontrib><creatorcontrib>ZHANG SHAOHUA</creatorcontrib><creatorcontrib>SUN TAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YUE XIAOPING</au><au>WANG SHENGFU</au><au>ZHOU MINGQI</au><au>ZHU YIFAN</au><au>ZHANG JUNJIE</au><au>WEN PENGHAO</au><au>QI MINGYAN</au><au>LI HONGJUN</au><au>ZHOU SHAOBO</au><au>YU LIANG</au><au>WANG XIAOWEI</au><au>TANG XIAODONG</au><au>WANG XIAOLONG</au><au>ZHANG SHAOHUA</au><au>SUN TAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Micromechanical filter with zeroing mode structure</title><date>2022-02-25</date><risdate>2022</risdate><abstract>The invention provides a micromechanical filter with zeroingmode structure, and belongs to the technical field of semiconductor packaging. The filter comprises an upper dielectric layer and a lower dielectric layer, the upper dielectric layer is provided with an upper layer grounding metalized through hole, a signal feed-in part and a signal feed-out part; the lower dielectric layer is bonded to the lower surface of the upper dielectric layer, the lower dielectric layer is provided with a lower layer grounding metalized through hole and a lower layer electromagnetic shielding metalized through hole, and the lower layer electromagnetic shielding metalized through hole serves as a zeroing mode resonant column; the signal feed-in part and the signal feed-out part do not physically communicate with the zeroing mode resonant column; and the upper dielectric layer and the lower dielectric layer realize common ground through the upper layer grounding metalized through hole and the lower layer grounding metalized thr</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN114094979A
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
title Micromechanical filter with zeroing mode structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T00%3A18%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YUE%20XIAOPING&rft.date=2022-02-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114094979A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true