Layout patterns for magnetoresistive random access memory

The invention discloses a layout pattern of a magnetoresistive random access memory, the layout pattern mainly comprises a first cell region, a second cell region, a third cell region and a fourth cell region which are arranged on a substrate and a diffusion region which is arranged on the substrate and extends to the first cell region, the second cell region, the third cell region and the fourth cell region, wherein the diffusion area comprises an H shape according to an upper view angle. 本发明公开一种磁阻式随机存取存储器的布局图案，其主要包含第一单元区、第二单元区、第三单元区以及第四单元区设于基底上以及一扩散区设于基底上并延伸至该第一单元区、该第二单元区、该第三单元区以及该第四单元区，其中该扩散区依据上视角度包含一H形。