Digit line formation for horizontally oriented access devices

Systems, methods, and apparatuses are provided for digit line formation for horizontally oriented access devices. One example method includes forming layers of a first dielectric material, a low doped semiconductor material, and a second dielectric material, in repeating iterations vertically to form a vertical stack; forming a vertical opening in the vertical stack; selectively etching the second dielectric material to form a horizontal opening in the second dielectric material; gas phase doping a dopant on a top surface of the low doped semiconductor material in the horizontal opening to form a source/drain region; forming a high doped semiconductor material in the horizontal opening; selectively etching the high doped semiconductor material formed in the horizontal opening such that a portion of the high doped semiconductor material remains; and converting the remaining high doped semiconductor material to a conductive material having a different characteristic from the remaining high doped semiconductor m