SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE

This disclosure relates to a semiconductor device comprising a first n+ region, a first p+ region within the first n+ region, a second n+ region, a second p+ region, positioned between the first n+ region and the second n+ region. The first n+ region, the second n+ region and the second p+ region ar...

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Bibliographische Detailangaben
Hauptverfasser: UTZIG JOACHIM, VADDAGERE NAGARAJU VASANTHA KUMAR, NOTERMANS GUIDO, HANS-MARTIN RITTER, HOLLAND STEFFEN
Format: Patent
Sprache:chi ; eng
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